US 2022/0044965 A1 · Conductive Via Of Integrated Circuitry, Memory Array Comprising Strings Of Memory Cells, Method Of Forming A Conductive Via Of Integrated Circuitry, And Method Of Forming A Memory Array Comprising Strings Of Memory Cells

Abstract

A method used in forming a conductive via of integrated circuitry comprises forming a lining laterally over sidewalk of an elevationally-elongated opening. The lining comprises elemental-form silicon. The elemental-form silicon of an uppermost portion of the lining is ion implanted in the elevationally-elongated opening. The ion-implanted elemental-form silicon of the uppermost portion of the lining is etched selectively relative to the elemental-form silicon of a lower portion of the lining below the uppermost portion that was not subjected to said ion implanting. The elemental-form silicon of the lower portion of the lining is reacted with a metal halide to form elemental-form metal in a lower portion of the elevationally-elongated opening that is the metal from the metal halide. Conductive material in the elevationally-elongated opening is formed atop and directly against the elemental-form metal. Other embodiments, including structure independent of method, are disclosed.

Claims28

Dependent claims

A method used in forming a conductive via of integrated circuitry, comprising:

forming a lining laterally over sidewalls of an elevationally-elongated opening, the lining comprising elemental-form silicon;
ion implanting the elemental-form silicon of an uppermost portion of the lining in the elevationally-elongated opening;
etching the ion-implanted elemental-form silicon of the uppermost portion of the lining selectively relative to the elemental-form silicon of a lower portion of the lining below the uppermost portion that was not subjected to said ion implanting;
reacting the elemental-form silicon of the lower portion of the lining with a metal halide to form elemental-form metal in a lower portion of the elevationally-elongated opening that is the metal from the metal halide;
and
forming conductive material in the elevationally-elongated opening atop and directly against the elemental-form metal.

3 more elements

Dependencies are inferred from the claim text.

Conductive Via Of Integrated Circuitry, Memory Array Comprising Strings Of Memory Cells, Method Of Forming A Conductive Via Of Integrated Circuitry, And Method Of Forming A Memory Array Comprising Strings Of Memory Cells

Life of this patent

Conductive Via Of Integrated Circuitry, Memory Array Comprising Strings Of Memory Cells, Method Of Forming A Conductive Via Of Integrated Circuitry, And Method Of Forming A Memory Array Comprising Strings Of Memory Cells

Life of this patent

Abstract

Claims28