Method for preparing semiconductor structure having void between bonded wafers

Abstract

A method includes providing a first wafer including a first substrate, a first dielectric layer disposed over the first substrate and a first component formed within the first dielectric layer; providing a second wafer including a second substrate, a second dielectric layer disposed over the second substrate, and a second component formed within the second dielectric layer; removing a first portion of the first dielectric layer to form a first recess; removing a second portion of the second dielectric layer to form a second recess; disposing the second wafer over the first wafer to bond the first dielectric layer to the second dielectric layer; removing a third portion of the second substrate and the second dielectric layer to form a third recess coupled to the second recess; and disposing a conductive material to fill the first recess, the second recess and the third recess to form a conductive structure.

Dependencies are inferred from the claim text.