Substrate supporting apparatus, substrate processing apparatus including the same, and substrate processing method

A substrate processing method comprising:

• providing a substrate within a substrate processing apparatus,
• supplying an inert gas within the substrate processing apparatus;
• and
• depositing a thin film by sequentially and repeatedly supplying a source gas, supplying a reaction gas, and activating the reaction gas within the substrate processing apparatus,
• wherein the substrate processing apparatus comprises:
• a reactor wall;
• a substrate supporting apparatus;
• a heater block;
• a gas inlet;
• a gas supply unit;
• and
• an exhaust unit,
• wherein the substrate supporting apparatus comprises a susceptor main body and a rim,
• wherein the susceptor main body comprises an inner portion, a periphery portion, and a concave portion between the inner portion and the periphery portion, and
• wherein the rim is arranged on the concave portion,
• wherein, when a substrate is mounted on the rim,
• the rim contacts the substrate within an edge exclusion zone of the substrate,
• the reactor wall and the periphery portion of the substrate supporting apparatus form a reaction space through face-contact,
• a separate space is formed between the inner portion and the substrate, and
• the reaction space and the separate space communicate with each other through one or more channels,
• wherein the inert gas is supplied from the reaction space to the separate space through the one or more channels before depositing the thin film, and
• wherein the inert gas prevents pressure imbalance between the reaction space and the separate space during the deposition of the thin film.

A substrate processing method comprising:

• supplying an inert gas;
• and
• depositing a thin film by sequentially and repeatedly supplying a source gas, supplying a reaction gas, and activating the reaction gas,
• wherein a center portion of a substrate and a center portion of a susceptor are spaced apart from each other to form a separate space,
• the reaction space above the substrate and the separate space communicate with each other via one or more channels,
• the inert gas is introduced to the separate space through the one or more channels during the supplying of the inert gas, and
• the introduced inert gas prevents pressure imbalance between the separate space and the reaction space during the deposition of the thin film.