Semiconductor structure and manufacturing method thereof

Abstract

A semiconductor structure and a manufacturing method thereof are provided. The manufacturing method includes: forming a stacked structure on the substrate, the stacked structure at least including a first material layer, a second material layer and a third material layer from bottom to top; patterning the stacked structure to obtain a first pattern structure; forming a spacer structure on a side wall of the first pattern structure, a top of the spacer structure being not lower than a top of the first material layer; and removing the third material layer, wherein during removing the third material layer, an etching selectivity of the third material layer to the second material layer is greater than 1.

Dependencies are inferred from the claim text.