Pulsed-plasma deposition of thin film layers

A semiconductor processing method comprising:

• generating a plasma from a deposition precursor in a processing region of a semiconductor processing chamber, wherein the plasma is generated at a delivered power within a first period of time, and wherein plasma power is delivered from a power source operating at a first peak power level;
• transitioning the power source from the first power level to a second peak power level after the first period of time;
• and
• depositing a layer on a substrate in the processing region of the semiconductor processing chamber from the generated plasma, wherein the layer as deposited is characterized by a thickness of 50 Å or less.

A semiconductor processing method comprising:

• flowing a deposition precursor into a processing region of a semiconductor processing chamber;
• generating a deposition plasma of the deposition precursor, wherein the deposition plasma is struck with a first delivered power operating for a first period of time, and wherein the plasma is maintained with a second delivered power operating for a second period of time;
• depositing a layer on a substrate in the processing region of the semiconductor processing chamber from the generated plasma, wherein the layer as deposited is characterized by a thickness of 50 Å or less;
• and
• treating the layer as deposited with a treatment plasma, wherein the treatment plasma replaces the deposition plasma in the processing region of the semiconductor processing chamber.