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US 2022/0044929 A1Published application
Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films
AssigneeVersum Patents US, LLC
InventorsMANCHAO XIAO, MATTHEW R. MACDONALD
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Abstract
Described herein are functionalized cyclosilazane precursor compounds and compositions and methods comprising same to deposit a silicon-containing film such as, without limitation, silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, silicon oxycarbonitride, or carbon-doped silicon oxide via a thermal atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) process, or a combination thereof.
Claims13
A method of depositing a silicon-containing film onto a substrate, the method comprising the steps of:
- a) providing a substrate in a reactor;
- b) introducing into the reactor at least one silicon precursor compound of claim 1;
- c) purging the reactor with purge gas;
- d) introducing an oxygen-containing or nitrogen-containing source (or combination thereof) into the reactor;
- and
- e) purging the reactor with purge gas,
- wherein steps b through e are repeated until a desired thickness of film is deposited, and
- wherein the method is conducted at one or more temperatures ranging from about 25° C. to 600° C.
5 more elements
Dependencies are inferred from the claim text.