Silicon compounds and methods for depositing films using same

A chemical vapor deposition method for producing a porous dielectric film, comprising:

• providing a substrate into a reaction chamber;
• introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising a silicon compound having the following Formula I:
• wherein X and Y are independently selected from the group consisting of OR1, OR2, and OC(O)R3;
• R1-3 are independently selected from the group consisting of a linear or branched C1 to C10 alkyl group, a linear or branched C2 to C10 alkenyl group, a linear or branched C2 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 hetero-cyclic alkyl group, a C5 to C10 aryl group, and a C3 to C10 hetero-aryl group;
• and R4 is a C3 to C5 alkyl di-radical which forms a four-membered, five-membered, or six-membered saturated cyclic ring with the Si atom, and further optionally comprise at least one oxygen source;
• and
• applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate.