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AssigneeApplied Materials, Inc.
InventorsHuiyuan Wang, Rick Kustra, Bo Qi, Abhijit Basu Mallick, Kaushik Alayavalli, Jay D. Pinson
Estimating the term…
Examples of the present technology include semiconductor processing methods to form boron-containing materials on substrates. Exemplary processing methods may include delivering a deposition precursor that includes a boron-containing precursor to a processing region of a semiconductor processing chamber. A plasma may be formed from the deposition precursor within the processing region of the semiconductor processing chamber. The methods may further include depositing a boron-containing material on a substrate disposed within the processing region of the semiconductor processing chamber, where the substrate is characterized by a temperature of less than or about 50° C. The as-deposited boron-containing material may be characterized by a surface roughness of less than or about 2 nm, and a stress level of less-than or about −500 MPa. In some embodiments, a layer of the boron-containing material may function as a hardmask.
A semiconductor processing method comprising:
A semiconductor processing method comprising:
A semiconductor processing method comprising:
Dependencies are inferred from the claim text.