Back to results
US 2022/0044924 A1Published application
Semiconductor structure processing method and manufacturing method
AssigneeChangxin Memory Technologies, Inc.
InventorsNing XI, Meng ZHU
Life of this patent
Estimating the term…
Abstract
This application relates to a semiconductor structure processing method, including: providing a semiconductor layer including a pattern, where a trench is located amongst the pattern; cleaning the pattern using a rinse liquid, where the rinse liquid fills the trench after the cleaning; forming a flexible layer, where the flexible layer displaces the rinse liquid and fills the trench, and covers a surface of the semiconductor layer; and hardening the flexible layer and subsequently removing the flexible layer.
Claims19
A semiconductor structure processing method, comprising:
- providing a semiconductor layer comprising a pattern, wherein a trench is located amongst the pattern;
- cleaning the pattern using a rinse liquid, wherein the rinse liquid fills the trench after the cleaning;
- forming a flexible layer, wherein the flexible layer displaces the rinse liquid and fills the trench, and covers a surface of the semiconductor layer;
- and
- hardening the flexible layer and subsequently removing the flexible layer.
2 more elements
Dependencies are inferred from the claim text.