Read Model of Memory Cells using Information Generated during Read Operations

A method, comprising:

• receiving, in a device having memory cells formed on an integrated circuit die, commands to read data from the memory cells;
• measuring signal and noise characteristics of a memory cell group, among the memory cells;
• calibrating read voltages of the memory cell group based on the signal and noise characteristics of a memory cell group;
• and
• generating, based at least in part on the signal and noise characteristics of the memory cell group, a model of changes of the group of memory cells.

A non-transitory computer storage medium storing instructions which, when executed in a device, cause the device to perform a method, the method comprising:

• receiving, in the device having memory cells formed on an integrated circuit die, commands to read data from the memory cells;
• measuring signal and noise characteristics of a memory cell group, among the memory cells;
• calibrating read voltages of the memory cell group based on the signal and noise characteristics of a memory cell group;
• and
• generating, based at least in part on the signal and noise characteristics of the memory cell group, a model of changes of the group of memory cells.