Memory device

A memory device comprising:

• a plurality of memory cells;
• page buffers configured to store sensing data sensed from the memory cells;
• a current sensing circuit configured to perform an individual current sensing operation of outputting a pass signal or a fail signal according to a verify result of each of selected program states in an individual current sensing mode and perform an entire current sensing operation of outputting the pass signal or the fail signal according to a verify result of the entire memory cells regardless of the selected program states after the individual current sensing operation is performed in a mixed current sensing mode, in response to a sensing mode signal;
• a sensing mode selector configured to output the sensing mode signal corresponding to the individual current sensing mode or the mixed current sensing mode in response to the pass signal or the fail signal, and output an operation code according to the sensing mode signal;
• and
• a voltage generator configured to discharge a selected word line during a first duration of time in the individual current sensing mode and discharge the selected word line during a second duration of time greater than the first duration of time in the mixed current sensing mode, in response to the operation code, after applying a program voltage to the selected word line connected to the memory cells, during a program operation.

A memory device comprising:

• a plurality of memory cells;
• page buffers configured to store sensing data sensed from the memory cells;
• a current sensing circuit configured to perform an individual current sensing operation of outputting a pass signal or a fail signal according to a verify result of each of selected program states in an individual current sensing mode and perform an entire current sensing operation of outputting the pass signal or the fail signal according to a verify result of the entire memory cells regardless of the selected program states after the individual current sensing operation is performed in a mixed current sensing mode, in response to a sensing mode signal;
• a sensing mode selector configured to output the sensing mode signal corresponding to the individual current sensing mode or the mixed current sensing mode in response to the pass signal or the fail signal, and output an operation code according to the sensing mode signal;
• and
• a voltage generator configured to apply a compensation voltage to a discharged selected word line during a first duration of time in the individual current sensing mode and apply the compensation voltage to the discharged selected word line during a second duration of time greater than the first duration of time in the mixed current sensing mode, in response to the operation code, after applying a program voltage to the selected word line connected to the memory cells and discharging the selected word line, during a program operation.