Iterative Read Calibration Enhanced according to Patterns of Shifts in Read Voltages

A method, comprising:

• programming a plurality of memory cells to have threshold voltages in a plurality of voltage regions to represent data stored in the plurality of memory cells;
• determining, based on first test voltages applied in a first voltage region among the plurality of voltage regions, a first shift of a threshold voltage of the plurality of memory cells in the first voltage region;
• predicting, based on the first shift, a second shift of a threshold voltage of the plurality of memory cells in a second voltage region among the plurality of voltage regions;
• determining, based on the second shift, second test voltages in the second voltage region;
• applying, to the plurality of memory cells, the second test voltages;
• and
• detecting, when a test voltage is applied to the plurality of memory cells, whether each memory cell, among the plurality of memory cells, has a threshold voltage below the test voltage.

A memory sub-system, comprising:

• a processing device;
• and
• at least one memory device having:
• a plurality of memory cells programmable to have threshold voltages in a plurality of voltage regions to represent data stored in the plurality of memory cells;
• and
• a calibration circuit operable to apply a test voltage to the plurality of memory cells and detect whether each memory cell, among the plurality of memory cells, has a threshold voltage below the test voltage;
• wherein in response to a command from the processing device, the memory device is configured to:
• determine, based on first test voltages applied in a first voltage region among the plurality of voltage regions, a first shift of a threshold voltage of the plurality of memory cells in the first voltage region;
• predict, based on the first shift, a second shift of a threshold voltage of the plurality of memory cells in a second voltage region among the plurality of voltage regions;
• compute, based on the second shift, second test voltages in the second voltage region;
• and
• determine, based on first test voltages applied to the plurality of memory cells, a read voltage in the second voltage region.