Cross-Point Array of Polymer Junctions with Individually-Programmed Conductances

A method of operating a memory device, the method comprising:

• providing the memory device comprising:
• first metal lines disposed on an insulating substrate;
• polymeric resistance elements disposed on the first metal lines, wherein the polymeric resistance elements comprise an organic polymer that is electrically conductive;
• second metal lines disposed over the polymeric resistance elements, wherein a single one of the polymeric resistance elements is present at each intersection of the first metal lines and the second metal lines forming a cross-point array with the first metal lines forming a series of rows and the second metal lines forming a series of columns;
• and
• programming the polymeric resistance elements using a voltage bias applied via the rows and the columns to increase a resistance of the polymeric resistance elements.