Matrix-vector multiplication using sot-based non-volatile memory cells

An apparatus comprising:

• a cross-point memory array comprising a plurality of spin orbit torque MRAM non-volatile memory cells configured to store synaptic weights of an artificial neural network;
• a plurality of word lines coupled to the spin orbit torque MRAM non-volatile memory cells;
• and
• a plurality of bit lines coupled to the spin orbit torque MRAM non-volatile memory cells,
• wherein in response to a plurality of input voltages coupled to the plurality of word lines, the spin orbit torque MRAM non-volatile memory cells generate output currents at the plurality of bit lines representing outputs of the artificial neural network.

A method comprising:

• programming each of a plurality of spin orbit torque MRAM non-volatile memory cells with a corresponding weight of an n×m array of weights each having a first weight value or a second weight value;
• generating n input voltages corresponding to an n-element input vector;
• and
• applying the n input voltages to the plurality of spin orbit torque MRAM non-volatile memory cells to generate m output currents that represent a result of multiplying the n-element input vector by the n×m array of weights.