Light emitting diode, method of manufacturing the same, and light emitting device

Abstract

The present disclosure provides a light-emitting diode, including a first electrode, a light-emitting functional layer and a second electrode which are stacked, the first electrode is a transparent electrode, the second electrode includes a metal electrode layer and a semiconductor auxiliary layer, the metal electrode layer is attached to the light-emitting functional layer, the semiconductor auxiliary layer is located on a surface of the metal electrode layer away from the light-emitting functional layer. The metal electrode layer is made of a magnesium-silver alloy, a thickness of the metal electrode layer is between 3 nm and 5 nm, and the semiconductor auxiliary layer is made of IZO, a thickness of the semiconductor auxiliary layer is between 100 nm and 130 nm. The present disclosure further provides a light emitting device and a method of manufacturing a light emitting diode. The light-emitting diode has high color rendering index and low power consumption.

Dependencies are inferred from the claim text.