Image pickup element, stacked image pickup element, and solid-state image pickup apparatus

Abstract

An image pickup element 10 includes a first electrode 21, a charge accumulation electrode 24 that is arranged apart from the first electrode 21, a photoelectric conversion unit 23 that contacts the first electrode 21 and is formed above the charge accumulation electrode 24 via an insulation layer 82, and a second electrode 22 formed on the photoelectric conversion unit 23. The photoelectric conversion unit 23 includes, from the second-electrode side, a photoelectric conversion layer 23A, and an inorganic oxide semiconductor material layer 23B including InaGabSncOd, and 0.30≤b/(a+b+c)≤0.50 and b≥c are satisfied.

Dependencies are inferred from the claim text.