Resistive memory device and methods of making such a resistive memory device

A device, comprising:

• a bottom electrode;
• a conformal switching layer positioned on and in physical contact with the bottom electrode;
• a top electrode positioned on and in physical contact with the conformal switching layer, the top electrode comprising:
• a conformal layer of conductive material positioned on and in physical contact with the conformal switching layer;
• and
• a conductive material positioned on and in physical contact with the conformal layer of conductive material;
• and
• a metallization layer comprising a plurality of conductive lines positioned within at least one layer of insulating material, wherein an upper surface of each of the plurality of conductive lines are substantially co-planar with one another and wherein one of the conductive lines physically contacts an upper surface of the top electrode.

A method, comprising:

• forming a bottom electrode for a memory device;
• forming at least one layer of insulating material above the bottom electrode;
• forming an opening in the at least one layer of insulating material, wherein the opening exposes at least a portion of an upper surface of the bottom electrode;
• performing at least one first conformal deposition process to form a conformal switching layer in the opening and above the bottom electrode;
• performing at least one second conformal deposition process to form at least one conformal layer of conductive material in the opening and above the conformal switching layer;
• depositing a conductive material in the opening and above the at least one conformal layer of conductive material;
• and
• removing portions of the conformal switching layer, the at least one conformal layer of conductive material and the conductive material that are positioned outside of the opening and above an upper surface of the at least one layer of insulating material.