Multi-doped data storage structure configured to improve resistive memory cell performance
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsBi-Shen Lee, Hai-Dang Trinh, Fa-Shen Jiang, Hsun-Chung Kuang
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Abstract
Various embodiments of the present disclosure are directed towards a memory device including a data storage structure overlying a substrate. A bottom electrode overlies the substrate and a top electrode overlies the bottom electrode. The data storage structure is disposed between the bottom electrode and the top electrode. The data storage structure comprises a dielectric material doped with a first dopant and a second dopant, where the first dopant is different from the second dopant.
Claims23
A memory device comprising:
- a substrate;
- a bottom electrode overlying the substrate;
- a top electrode overlying the bottom electrode;
- and
- a data storage structure disposed between the top electrode and the bottom electrode, wherein the data storage structure comprises a dielectric material doped with a first dopant and a second dopant, wherein the first dopant is different from the second dopant.
An integrated chip comprising:
- a substrate;
- and
- a resistive random access memory (RRAM) cell overlying the substrate, wherein the RRAM cell comprises a top electrode, a bottom electrode, and a data storage structure disposed between the top and bottom electrodes, wherein the data storage structure comprises a first high-κ dielectric material and a plurality of dopants, wherein the plurality of dopants comprises a first dopant, a second dopant, and a third dopant that are respectively different from one another.
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17-20. (canceled)
An integrated chip comprising:
- a bottom electrode overlying a substrate;
- a top electrode overlying the bottom electrode;
- a data storage layer disposed between the top electrode and the bottom electrode;
- and
- a multi-doped data storage layer disposed between the bottom electrode and the data storage layer, wherein the multi-doped data storage layer comprises a dielectric material doped co-doped with a first dopant and a second dopant.
Dependencies are inferred from the claim text.