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AssigneeNational Institute of Advanced Industrial Science and Technology
InventorsMasato UEHARA, Hiroshi YAMADA, Morito AKIYAMA, Sri Ayu ANGGRAINI, Kenji HIRATA
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There are provided a piezoelectric body of ytterbium-doped aluminum nitride, having a greater piezoelectric coefficient d33 or g33 than those not doped with ytterbium, and a MEMS device using the piezoelectric body. The piezoelectric body is represented by a chemical formula Al1-xYbxN where a value of x is more than 0 and less than 0.37 and having a lattice constant ratio c/a in a range of 1.53 or more and less than 1.6. The piezoelectric body with such a configuration has a greater piezoelectric coefficient d33 or g33 than those not doped with ytterbium.
A nitride material represented by a chemical formula Al1-xYbxN where a value of x is more than 0 and less than 0.37 and having a lattice constant ratio c/a in a range of 1.53 or more and less than 1.6.
A piezoelectric body wherein the piezoelectric body according to claim 10 is disposed on a substrate, and at least an intermediate layer is disposed between the piezoelectric body and the substrate.
A MEMS devise using the piezoelectric body according to claim 10.
Dependencies are inferred from the claim text.