Piezoelectric device and method of manufacturing the same

A method of manufacturing a piezoelectric device;

• the method comprising:
• forming a piezoelectric layer by sputtering onto a surface of a first electrode, the piezoelectric layer including ZnO as a main component, and a predetermined amount of Mg;
• and
• providing a second electrode on the piezoelectric layer in a stacking direction,
• wherein the sputtering is controlled such that an amount of Mg with respect to a total amount of Zn and Mg in the piezoelectric layer is 5 atom % to 30 atom %.

A method of manufacturing a piezoelectric device;

• the method comprising:
• forming a piezoelectric layer by sputtering onto a surface of a first electrode to form, the piezoelectric layer including ZnO as a main component, and a predetermined amount of Si;
• and
• providing a second electrode on the piezoelectric layer in a stacking direction,
• wherein the sputtering is controlled such that an amount of Si with respect to a total amount of Zn and Si in the piezoelectric layer is 3 atom % to 10 atom %.

A method of manufacturing a piezoelectric device;

• the method comprising:
• forming a first piezoelectric film by sputtering onto a surface of a first electrode, the first piezoelectric film including a wurtzite crystal material as a main component, and a first subcomponent added to the main component;
• forming a second piezoelectric film by sputtering onto the first piezoelectric film in a stacking direction to fabricate a piezoelectric layer that includes the first piezoelectric film and the second piezoelectric film, the second piezoelectric film including the wurtzite crystal material as the main component, and a second subcomponent;
• and
• providing a second electrode on the piezoelectric layer.