Oxide stacked body and method for producing the same
AssigneesIdemitsu Kosan Co., Ltd., National University Corporation Tokai National Higher Education and Research System, Nikkiso Co., Ltd.
InventorsYoshihiro UEOKA, Shigekazu TOMAI, Satoshi KATSUMATA, Maki KUSHIMOTO, Manato DEKI, Yoshio HONDA, Hiroshi AMANO
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Abstract
A stacked body comprising: a semiconductor layer comprising a group III-V nitride semiconductor, and an electrode layer, wherein the electrode layer comprises magnesium oxide and zinc oxide, wherein the molar ratio of magnesium based on the sum of magnesium and zinc of the electrode layer [Mg/(Mg+Zn)] is 0.25 or more and 0.75 or less, and conductivity of the electrode layer is 1.0×10−2 S/cm or more.
Claims19
A stacked body, comprising:
- a semiconductor layer comprising a group III-V nitride semiconductor, and
- an electrode layer,
- wherein the electrode layer comprises magnesium oxide and zinc oxide,
- wherein the electrode layer has a molar ratio of magnesium based on a sum of magnesium and zinc [Mg/(Mg+Zn)] of from 0.25 to 0.75, and
- the electrode layer has a conductivity of 1.0×10−2 S/cm or more.
Dependencies are inferred from the claim text.