Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip
AssigneeOSRAM OLED GmbH
InventorSiegfried HERRMANN
Life of this patent
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Abstract
An optoelectronic semiconductor chip comprises a semiconductor layer sequence and several semiconductor structures having in each case one active region. The active regions may be designed for the emission and/or absorption of electromagnetic radiation. The active regions of different semiconductor structures may not be connected to one another. The semiconductor structures may be designed as a nanorod or a microrod. The semiconductor structures may be embedded in the semiconductor layer sequence.
Claims11
An optoelectronic semiconductor chip comprising:
- a semiconductor layer sequence;
- and
- a plurality of semiconductor structures having a plurality of active regions;
- wherein:
- the plurality of active regions are configured for the emission and/or absorption of electromagnetic radiation;
- the plurality of active regions are not connected to each other;
- and
- the semiconductor structures are formed as nanorods, microrods, or combinations thereof;
- the semiconductor structures are embedded in the semiconductor layer sequence.
A method of manufacturing an optoelectronic semiconductor chip, wherein the method comprises:
- providing a growth substrate having a growth side;
- growing semiconductor structures each having an active region on the growth side;
- and
- growing a semiconductor layer sequence on the growth side;
- wherein:
- each semiconductor structure is a nanorod or a microrod;
- the active regions are each configured to emit and/or absorb electromagnetic radiation;
- the active regions are not connected to each other;
- the semiconductor structures are embedded in the semiconductor layer sequence;
- the semiconductor structures are conversion elements;
- the semiconductor layer sequence comprises an active layer configured to generate or absorb a primary radiation;
- the conversion elements are configured to convert the primary radiation into a secondary radiation;
- and
- the active layer comprises a plurality of elevations and each elevation is associated with a semiconductor structure.
An optoelectronic semiconductor chip comprising:
- a semiconductor layer sequence;
- and
- a plurality of semiconductor structures each having an active region;
- wherein:
- the active regions are configured for the emission and/or absorption of electromagnetic radiation;
- the active regions are not connected to each other;
- the semiconductor structures are formed as nanorods, microrods, or combinations thereof;
- the semiconductor structures are embedded in the semiconductor layer sequence;
- the semiconductor structures are conversion elements;
- the semiconductor layer sequence comprises an active layer configured to generate or absorb a primary radiation;
- the conversion elements are configured to convert the primary radiation into a secondary radiation or to convert a secondary radiation into the primary radiation;
- and
- the active layer comprises a plurality of elevations and each elevation is associated with a semiconductor structure.
Dependencies are inferred from the claim text.