Micro light emitting diode, array substrate, display apparatus, and method of fabricating array substrate

An array substrate, comprising:

• an array of a plurality of micro light emitting diodes (micro LEDs) on a base substrate;
• wherein a respective one of the plurality of micro LEDs comprises:
• a first electrode on the base substrate;
• a first type doped semiconductor layer on a side of the first electrode away from the base substrate;
• a quantum-well layer on a side of the first type doped semiconductor layer away from the first electrode;
• a second type doped semiconductor layer on a side of the quantum-well layer away from the first type doped semiconductor layer;
• and
• a second electrode on a side of the second type doped semiconductor layer away from the quantum-well layer;
• wherein an orthographic projection of the first type doped semiconductor layer on the base substrate covers, and has an area greater than, an orthographic projection of the first electrode on the base substrate;
• an orthographic projection of the quantum-well layer on the base substrate covers, and has an area greater than, the orthographic projection of the first type doped semiconductor layer on the base substrate;
• an orthographic projection of the second type doped semiconductor layer on the base substrate covers, and has an area greater than, the orthographic projection of the quantum-well layer on the base substrate;
• and
• an orthographic projection of the second electrode on the base substrate covers, and has an area greater than, the orthographic projection of the second type doped semiconductor layer on the base substrate.

A method of fabricating an array substrate, comprising:

• forming a plurality of micro light emitting diodes (micro LEDs) on a base substrate;
• wherein forming a respective one of the plurality of micro LEDs comprises:
• forming a first electrode on a base substrate;
• forming a first type doped semiconductor layer on a side of the first electrode away from the base substrate;
• forming a quantum-well layer on a side of the first type doped semiconductor layer away from the first electrode;
• forming a second type doped semiconductor layer on a side of the quantum-well layer away from the first type doped semiconductor layer;
• and
• forming a second electrode on a side of the second type doped semiconductor layer away from the quantum-well layer;
• wherein an orthographic projection of the first type doped semiconductor layer on the base substrate covers, and has an area greater than, an orthographic projection of the first electrode on the base substrate;
• an orthographic projection of the quantum-well layer on the base substrate covers, and has an area greater than, the orthographic projection of the first type doped semiconductor layer on the base substrate;
• an orthographic projection of the second type doped semiconductor layer on the base substrate covers, and has an area greater than, the orthographic projection of the quantum-well layer on the base substrate;
• and
• an orthographic projection of the second electrode on the base substrate covers, and has an area greater than, the orthographic projection of the second type doped semiconductor layer on the base substrate.