Back to results
US 2022/0037549 A1Published application
Avalanche Photodiode and Method for Manufacturing Same
AssigneeNippon Telegraph and Telephone Corporation
InventorsYuki Yamada, Fumito Nakajima
Life of this patent
Estimating the term…
Abstract
An embodiment avalanche photodiode includes a substrate, an n-type contact layer, a buffer layer, a multiplication layer, a field-control layer, an absorption layer, and a p-type contact layer. A conductive layer is formed in a central part of the buffer layer. The substrate is constituted of a semiconductor with a higher thermal conductivity than InP such as SiC, and the n-type contact layer is constituted of a same semiconductor as the substrate and is made n-type.
Claims12
-8. (canceled)
An avalanche photodiode comprising:
- a substrate comprising a semiconductor having a higher thermal conductivity than InP;
- an n-type contact layer on the substrate and comprising an n-type of the semiconductor;
- a multiplication layer on the n-type contact layer and comprising a non-doped group III-V compound semiconductor having a lattice constant in a planar direction that matches that of InP;
- a field-control layer on the multiplication layer and comprising a first group III-V compound semiconductor having a lattice constant in a planar direction that matches that of InP;
- an absorption layer on the field-control layer and comprising a second group III-V compound semiconductor having a lattice constant in a planar direction that matches that of InP;
- and
- a p-type contact layer on the absorption layer and comprising a p-type group III-V compound semiconductor having a lattice constant in a planar direction that matches that of InP.
4 more elements
A method of manufacturing an avalanche photodiode, the method comprising:
- a first step of forming an n-type contact layer on a first substrate comprising a semiconductor with a higher thermal conductivity than InP, wherein the n-type contact layer comprises an n-type of the semiconductor;
- a second step of forming a p-type contact layer on a second substrate, the second substrate comprising a first group III-V compound semiconductor having a lattice constant in a planar direction that matches that of InP, wherein the p-type contact layer comprises a p-type group III-V compound semiconductor having a lattice constant in a planar direction that matches that of InP, forming an absorption layer on the p-type contact layer, the absorption layer comprising a second group III-V compound semiconductor having a lattice constant in a planar direction that matches that of InP, forming a field-control layer on the absorption layer, the field-control layer comprising a third group III-V compound semiconductor having a lattice constant in a planar direction that matches that of InP, and forming a multiplication layer on the field-control layer, the multiplication layer comprising a non-doped group III-V compound semiconductor having a lattice constant in a planar direction that matches that of InP;
- a third step of bonding the first substrate and the second substrate to each other so that a side of the first substrate on which the n-type contact layer is formed and a side of the second substrate on which the multiplication layer is formed face each other;
- and
- a fourth step of removing the second substrate after bonding the first substrate and the second substrate to each other, wherein the n-type contact layer, the multiplication layer, the field-control layer, the absorption layer, and the p-type contact layer are stacked on the first substrate in this order.
2 more elements
Dependencies are inferred from the claim text.