Semiconductor device and method for manufacturing semiconductor device

A semiconductor device comprising:

• a first insulator;
• a first oxide over the first insulator;
• a second oxide, a second conductor, and a third conductor which are over the first oxide;
• a second insulator over the second oxide;
• a fourth conductor over the second insulator;
• and
• a third insulator over the fourth conductor,
• wherein each of the first insulator and the third insulator has a barrier property against hydrogen,
• wherein the third insulator includes a first region in contact with the first insulator,
• wherein each of the second conductor and the third conductor includes nitrogen and a metal,
• wherein each of the second conductor and the third conductor has a physical property of extracting hydrogen,
• wherein each of the second conductor and the third conductor includes a second region having a hydrogen concentration higher than or equal to 2.0×1019 atoms/cm3 and lower than or equal to 1.0×1021 atoms/cm3, and
• wherein at least part of hydrogen atoms included in the second region is bonded to a nitrogen atom.

A semiconductor device comprising:

• a transistor;
• and
• an insulator surrounding the transistor,
• wherein the insulator has a barrier property against hydrogen,
• wherein the transistor includes an oxide and a conductor,
• wherein the oxide includes a channel formation region,
• wherein the conductor includes nitrogen and a metal,
• wherein the conductor has a physical property of extracting hydrogen,
• wherein the conductor includes a region having a hydrogen concentration higher than that in the channel formation region, and
• wherein at least part of hydrogen atoms included in the region is bonded to a nitrogen atom.