Semiconductor device and manufacturing method of the same

A semiconductor device, comprising:

• a semiconductor over a substrate;
• a first conductor and a second conductor over the semiconductor;
• a first insulator over the first conductor and the second conductor;
• a second insulator over the semiconductor;
• a third insulator over the second insulating;
• a third conductor over the third insulating;
• a fourth conductor over the third conductor;
• and
• a fifth conductor between the substrate and the semiconductor,
• wherein the third insulator has a region in contact with a side surface of the first insulator,
• wherein the third conductor and the fourth conductor have a function as a gate electrode,
• wherein the fifth conductor has a region overlapping with the third conductor and the fourth conductor,
• wherein the semiconductor has a first region overlapping a bottom surface of the first conductor, a second region overlapping a bottom surface of the second conductor, and a third region overlapping a bottom surface of the third conductor, and
• wherein a length between a top surface of the semiconductor and the bottom surface of the third conductor is greater than the length between the first region and the third region.

A semiconductor device, comprising:

• a semiconductor over a substrate;
• a first conductor and a second conductor over the semiconductor;
• a first insulator over the first conductor and the second conductor;
• a second insulator over the semiconductor;
• a third insulator over the second insulating;
• a third conductor over the third insulating;
• and
• a fourth conductor over the third conductor,
• wherein the third insulator has a region in contact with a side surface of the first insulator,
• wherein the semiconductor has a first region overlapping a bottom surface of the first conductor, a second region overlapping a bottom surface of the second conductor, and a third region overlapping a bottom surface of the third conductor, and
• wherein a length between a top surface of the semiconductor and the bottom surface of the third conductor is greater than the length between the first region and the third region.