Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nmos transistors

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, the integrated circuit structure comprising:
• a nanostructure of semiconductor material including at least 70% germanium by atomic percentage;
• a gate structure completely surrounding the nanostructure, the gate structure including a gate dielectric and a gate electrode;
• a source region and a drain region both adjacent to the nanostructure such that the nanostructure is between the source and drain regions, the source region and the drain region comprising a semiconductor material comprising silicon, and at least one of the source region and the drain region including n-type impurity;
• a contact structure on the at least one of the source region and the drain region;
• and
• a layer of mono-crystalline semiconductor material distinct from and between the at least one of the source region and the drain region and the contact structure, the layer of mono-crystalline semiconductor material comprising the semiconductor material comprising silicon, and the mono-crystalline semiconductor material including the n-type impurity.