Conformal oxidation for gate all around nanosheet i/o device
AssigneeApplied Materials, Inc.
InventorsMyungsun Kim, Michael Stolfi, Benjamin Colombeau, Andy Lo
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Abstract
Horizontal gate-all-around devices and methods of manufacturing the same are described. The hGAA devices comprise an oxidize layer on a semiconductor material between source regions and drain regions of the device. The method includes radical plasma oxidation (RPO) of semiconductor material layers between source regions and drain regions of an electronic device.
Claims20
A method of forming a semiconductor device, comprising:
- pre-cleaning a plurality of semiconductor material layers to remove native oxide and/or residues;
- and
- forming an oxide layer on the plurality of semiconductor material layers.
A horizontal gate-all-around device comprising an oxide layer surrounding a plurality of horizontal semiconductor material layers between a source region and a drain region.
A non-transitory computer readable medium, having instructions stored thereon which, when executed, cause a method of forming a semiconductor device, the method comprising:
- pre-clean a plurality of semiconductor material layers to remove native oxide and/or residues;
- and
- form an oxide layer on the plurality of semiconductor material layers using radical plasma oxidation.
Dependencies are inferred from the claim text.