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US 2022/0037525 A1Published application
High voltage semiconductor device having bootstrap diode
AssigneeKey Foundry Co., Ltd.
InventorYoung Bae KIM
Life of this patent
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Abstract
A semiconductor device includes a source region and a drain region formed in a substrate and having different conductivity types, an insulating film formed between the source region and the drain region, a deep well region formed under the insulating film, and a pinch-off region formed under the insulating film and having a same conductivity type as the deep well region, wherein a depth of a bottom surface of the pinch-off region is different from a depth of a bottom surface of the deep well region.
Claims28
A semiconductor device, comprising:
- a source region and a drain region formed in a substrate and having different conductivity types;
- an insulating film formed between the source region and the drain region;
- a deep well region formed under the insulating film;
- and
- a pinch-off region formed under the insulating film and having a same conductivity type as the deep well region,
- wherein a depth of a bottom surface of the pinch-off region is different from a depth of a bottom surface of the deep well region.
3 more elements
A semiconductor device, comprising:
- a first deep well region and a second deep well region formed in a substrate;
- a diffusion region formed between the first and second deep well regions;
- a P-type source region formed in the first deep well region;
- an N-type drain region formed in the second deep well region;
- and
- a buried layer formed between the P-type source region and the N-type drain region,
- wherein the diffusion region is formed under the buried layer, and a depth of a bottom surface of the diffusion region is different from a depth of a bottom surface of the second deep well region formed under the buried layer.
4 more elements
A semiconductor device, comprising:
- a source region and a drain region formed in a substrate;
- an insulating film formed between the source region and the drain region;
- a deep well region formed under the insulating film;
- and
- a pinch-off region formed under the insulating film and having a same conductivity type as the deep well region,
- wherein a depth of a bottom surface of the pinch-off region is smaller than a depth of a bottom surface of the deep well region.
3 more elements
Dependencies are inferred from the claim text.