Transistor semiconductor die with increased active area

Abstract

A transistor semiconductor die includes a drift layer, a first dielectric layer, a first metallization layer, a second dielectric layer, a second metallization layer, a first plurality of electrodes, and a second plurality of electrodes. The first dielectric layer is over the drift layer. The first metallization layer is over the first dielectric layer such that at least a portion of the first metallization layer provides a first contact pad. The second dielectric layer is over the first metallization layer. The second metallization layer is over the second dielectric layer such that at least a portion of the second metallization layer provides a second contact pad and the second metallization layer at least partially overlaps the first metallization layer. The transistor semiconductor die is configured to selectively conduct current between the first contact pad and a third contact pad based on signals provided at the second contact pad.

Dependencies are inferred from the claim text.