US 2022/0037522 A1 · TRENCH MOSFET AND METHOD FOR MANUFACTURING THE SAME

Abstract

A trench MOSFET can include: a semiconductor base having a first doping type; a trench extending from an upper surface of the semiconductor base to internal portion of the semiconductor base; an insulating layer and an electrode conductor located in the trench; a body region having a second doping type and extending from the upper surface of the semiconductor base to the inside thereof and adjacent to the trench; a source region having the first doping type and located in the body region, a first barrier layer located on the electrode conductor and the semiconductor base; and a contact hole in the semiconductor base on both sides of the first barrier layer, where the contact hole is formed by etching process using the first barrier layer as a mask.

Claims20

Dependent claims

A method of manufacturing a trench metal-oxide-semiconductor field-effect transistor (MOSFET), the method comprising:

a) forming a trench extending from an upper surface of a semiconductor base to internal portion of the semiconductor base;
b) forming an insulating layer and an electrode conductor in the trench;
c) forming a patterned first barrier layer on an upper surface of the electrode conductor and an upper surface of the semiconductor base;
d) etching part of the semiconductor base to form a contact hole using the patterned first barrier layer as a mask;
and
e) forming a body contact region in the semiconductor base through the contact hole using a self-aligned process, wherein the semiconductor base is of the first doping type, the body contact region is of the second doping type.

3 more elements

Dependencies are inferred from the claim text.

Trench mosfet and method for manufacturing the same

Life of this patent

Trench mosfet and method for manufacturing the same

Life of this patent

Abstract

Claims20