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US 2022/0037519 A1Published application
Transistor structures and associated processes
OwnerFu-Chang Hsuinventor
Life of this patent
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Abstract
Transistor structures and associated processes are disclosed. In an exemplary embodiment, a transistor structure is provided that includes a conductor layer divided into a plurality of separate conductor regions and a plurality of lateral transistors formed on top of the plurality of separate conductor regions, respectively. Each lateral transistor comprises a source, a drain, and a gate region, and at least one of the source, drain, and gate regions of each lateral transistor is conductively coupled underneath to its respective conductor region.
Claims20
A transistor structure, comprising:
- a conductor layer divided into a plurality of separate conductor regions;
- and
- a plurality of lateral transistors formed on top of the plurality of separate conductor regions, respectively, wherein each lateral transistor comprises a source, a drain, and a gate region, and wherein at least one of the source, drain, and gate regions of each lateral transistor is conductively coupled underneath to its respective conductor region.
A transistor structure, comprising:
- a conductor layer divided into a plurality of separate conductor regions;
- and
- two lateral transistors formed on top of each of the plurality of separate conductor regions, respectively, wherein each lateral transistor comprises a source, a drain, and a gate region, and wherein at least one of the source, drain, and gate regions of each lateral transistor is conductively coupled underneath to its respective conductor region.
Dependencies are inferred from the claim text.