Semiconductor device and manufacturing method of semiconductor device

A manufacturing method of a semiconductor device comprising a first conductor, a first insulator, a second insulator, a first oxide, and a second oxide, comprising:

• forming the first oxide over a substrate;
• forming the first insulator over the first oxide;
• performing microwave treatment from above the first insulator;
• performing heat treatment on one or both of the first insulator and the first oxide;
• forming an opening reaching the first oxide in the first insulator;
• depositing a first oxide film in contact with the first oxide and the first insulator in the opening;
• depositing a first insulating film over the first oxide film;
• depositing a first conductive film over the first insulating film;
• and
• removing part of the first oxide film, part of the first insulating film, and part of the first conductive film until a top surface of the first insulator is exposed to form the second oxide, the second insulator, and the first conductor,
• wherein the microwave treatment is performed using a gas containing oxygen under reduced pressure, and
• wherein the heat treatment is performed under reduced pressure.

A manufacturing method of a semiconductor device comprising a first conductor, a first insulator to a third insulator, a first oxide, and a second oxide, comprising:

• forming the first oxide over a substrate;
• forming the first insulator over the first oxide;
• forming an opening reaching the first oxide in the first insulator;
• depositing a first oxide film in contact with the first oxide and the first insulator in the opening;
• depositing a first insulating film over the first oxide film;
• depositing a first conductive film over the first insulating film;
• removing part of the first oxide film, part of the first insulating film, and part of the first conductive film until a top surface of the first insulator is exposed to form the second oxide, the second insulator, and the first conductor;
• forming the third insulator over the first conductor;
• performing microwave treatment from above the third insulator;
• and
• performing heat treatment on one or both of the first insulator and the first oxide,
• wherein the microwave treatment is performed using a gas containing oxygen under reduced pressure, and
• wherein the heat treatment is performed under reduced pressure.