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US 2022/0037501 A1Published application
Semiconductor device and manufacturing method of the semiconductor device
AssigneeSK hynix Inc.
InventorNam Jae LEE
Life of this patent
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Abstract
The present technology provides a semiconductor device. The semiconductor device includes a stack including insulating patterns and conductive patterns stacked alternately with each other, a channel layer including a first channel portion protruding out of the stack and a second channel portion in the stack, and passing through the stack, and a conductive line surrounding the first channel portion, and the first channel portion includes metal silicide.
Claims19
A semiconductor device comprising:
- a stack including insulating patterns and conductive patterns stacked alternately with each other;
- a channel layer including a first channel portion protruding out of the stack and a second channel portion in the stack, and passing through the stack;
- and
- a conductive line surrounding the first channel portion,
- wherein the first channel portion includes metal silicide.
2 more elements
A semiconductor device comprising:
- a stack including insulating patterns and conductive patterns stacked alternately with each other;
- a channel layer including a first channel portion protruding out of the stack and a second channel portion in the stack, and passing through the stack;
- and
- a conductive line surrounding the first channel portion,
- wherein the first channel portion, the second channel portion, and the conductive line include different materials.
2 more elements
Dependencies are inferred from the claim text.