Semiconductor Structure and its Fabricating Method
AssigneeChangxin Memory Technologies, Inc.
InventorsBing ZOU, Cheng Yeh HSU
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Abstract
Embodiments of the present application provide a semiconductor structure and its fabricating method, and a semiconductor memory. The method of fabricating a semiconductor structure comprises providing a substrate and performing ion implantation on the substrate to form an active area, forming a gate groove on surface of the substrate, measuring depth of the gate groove, and performing ion implantation compensation, if the depth of the gate groove meets a preset condition, on the substrate according to the depth of the gate groove, and forming an ion compensation region in the active area at one side of the gate groove.
Claims15
A method of fabricating a semiconductor structure, comprising:
- providing a substrate and performing ion implantation on the substrate to form an active area;
- forming a gate groove on surface of the substrate;
- measuring depth of the gate groove;
- and
- performing ion implantation compensation, if the depth of the gate groove meets a preset condition, on the substrate according to the depth of the gate groove, and forming an ion compensation region in the active area at one side of the gate groove.
A semiconductor structure, comprising:
- a substrate, a gate groove, and an ion compensation region;
- and
- an active area, disposed in the substrate;
- wherein the ion compensation region is located in the active area at one side of the gate groove whose depth meets a preset condition.
Dependencies are inferred from the claim text.