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US 2022/0037477 A1Published application
METHOD FOR FORMING OHMIC CONTACTS, PARTICULARLY OF Ni(GeSn) TYPE IMPLEMENTING LASER ANNEALING
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsAndréa-Carolina QUINTERO COLMENA, Pablo ACOSTA ALBA, Philippe RODRIGUEZ
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Abstract
The invention relates to a method for producing ohmic contacts, of type including a metal, a semiconductor and tin, including: a) forming a first layer (6), of an alloy of the semiconductor and of tin; b) then, on the first layer, forming a second layer (8), of said metal; c) laser annealing the first layer and the second layer at an energy density between 0.1 and 2 J/cm2.
Claims17
Method for producing ohmic contacts, comprising a metal, a semiconductor and tin, including:
- a) forming a first layer, of an alloy of the semiconductor and of tin;
- b) then, on the first layer, forming a second layer, of said metal;
- c) laser annealing at least the first layer at an energy density between 0.1 and 2 J/cm2
Dependencies are inferred from the claim text.