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US 2022/0037475 A1Published application
Semiconductor device and electronic device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKouhei TOYOTAKA, Hideki UOCHI
Life of this patent
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Abstract
A semiconductor device and the like with low power consumption are provided. In a semiconductor device including an electrostatic actuator group, an OS transistor and a capacitor are provided in each electrostatic actuator, and a power supply voltage supplied from the outside is boosted in each electrostatic actuator. The use of the OS transistor can retain the boosted voltage for a long period even after the supply of the power supply voltage is stopped. The use of the OS transistor can miniaturize the capacitor.
Claims15
1-8. (canceled)
A semiconductor device comprising:
- first to fourth transistors;
- a first capacitor;
- a second capacitor;
- first to third electrodes;
- and
- first to sixth wirings,
- wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to the first wiring,
- wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to one electrode of the first capacitor and the first electrode,
- wherein a gate electrode of the first transistor is electrically connected to the fifth wiring,
- wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to the second wiring,
- wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to the other electrode of the first capacitor,
- wherein a gate electrode of the second transistor is electrically connected to the sixth wiring,
- wherein one of a source electrode and a drain electrode of the third transistor is electrically connected to the third wiring,
- wherein the other of the source electrode and the drain electrode of the third transistor is electrically connected to one electrode of the second capacitor and the second electrode,
- wherein a gate electrode of the third transistor is electrically connected to the fifth wiring,
- wherein one of a source electrode and a drain electrode of the fourth transistor is electrically connected to the fourth wiring,
- wherein the other of the source electrode and the drain electrode of the fourth transistor is electrically connected to the other electrode of the second capacitor,
- wherein a gate electrode of the fourth transistor is electrically connected to the sixth wiring,
- wherein semiconductor layers of the first to the fourth transistors each comprise an oxide semiconductor, and
- wherein the third electrode has a function of tilting in accordance with potentials of the first electrode and the second electrode.
17 more elements
A semiconductor device comprising:
- first to fourth transistors;
- a first capacitor;
- a second capacitor;
- first to third electrodes;
- and
- first to sixth wirings,
- wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to the first wiring,
- wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to one electrode of the first capacitor and the first electrode,
- wherein a gate electrode of the first transistor is electrically connected to the fifth wiring,
- wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to the second wiring,
- wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to the other electrode of the first capacitor,
- wherein a gate electrode of the second transistor is electrically connected to the sixth wiring,
- wherein one of a source electrode and a drain electrode of the third transistor is electrically connected to the third wiring,
- wherein the other of the source electrode and the drain electrode of the third transistor is electrically connected to one electrode of the second capacitor and the second electrode,
- wherein a gate electrode of the third transistor is electrically connected to the fifth wiring,
- wherein one of a source electrode and a drain electrode of the fourth transistor is electrically connected to the fourth wiring,
- wherein the other of the source electrode and the drain electrode of the fourth transistor is electrically connected to the other electrode of the second capacitor,
- wherein a gate electrode of the fourth transistor is electrically connected to the sixth wiring,
- wherein semiconductor layers of the first to the fourth transistors each comprise an oxide semiconductor,
- wherein a distance between the first electrode and the third electrode changes in accordance with a potential of the first electrode, and
- wherein a distance between the second electrode and the third electrode changes in accordance with a potential of the second electrode.
18 more elements
Dependencies are inferred from the claim text.