Silicon carbide semiconductor device and method of manufacturing same

A silicon carbide semiconductor device with a transistor region in which a Schottky barrier diode region is interposed in at least one direction included in an in-plane direction, the silicon carbide semiconductor device comprising:

• a semiconductor layer extending over the transistor region and the Schottky barrier diode region, the semiconductor layer including,
• a drift layer extending over the transistor region and the Schottky barrier diode region, reaching a surface of the semiconductor layer in the Schottky barrier diode region, being made of silicon carbide, and having a first conductivity type,
• a body region being provided on the drift layer in the transistor region and having a second conductivity type different from the first conductivity type,
• a source region being provided on the body region and having the first conductivity type,
• at least one trench having a first side surface facing the Schottky barrier diode region, and a second side surface extending in the transistor region and contacting the source region, the body region, and the drift layer,
• a first protective region being provided below the at least one trench, having the second conductivity type, and being higher in impurity concentration of the second conductivity type than the body region, and
• a second protective region extending from the first protective region, reaching at least one of the first side surface and an end region of the second side surface, the end region being continuous with the first side surface, the second protective region having an uppermost portion shallower than a lowermost portion of the body region, having the second conductivity type, and being higher in impurity concentration of the second conductivity type than the body region;
• a gate electrode provided in the at least one trench;
• a gate insulating film separating the semiconductor layer and the gate electrode from each other in the at least one trench;
• and
• a Schottky electrode contacting the semiconductor layer in the Schottky barrier diode region.