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US 2022/0037469 A1Published application
Elastic strain engineering of defect doped materials
AssigneesMassachusetts Institute of Technology, Nanyang Technological University
InventorsMing Dao, Ju Li, Zhe Shi, Subra Suresh
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Abstract
Compositions and methods related to straining defect doped materials as well as their methods of use in electrical circuits are generally described.
Claims22
1-16. (canceled)
A method of controlling a conductive state of a defect doped material, the method comprising:
- applying a strain to at least a portion of the defect doped material;
- and
- transitioning the defect doped material from a non-conductive material to a semiconducting material or a conducting material, wherein an activation energy to ionize defects of the defect doped material in a strained state is less than the activation energy to ionize the defects when the defect doped material is in an unstrained state.
31-42. (canceled)
A method of controlling a conductive state of a portion of an electrical circuit, the method comprising:
- applying a strain to a defect doped material forming at least a portion of the electrical circuit;
- and
- transitioning the defect doped material from a non-conductive material to a semiconducting material or a conducting material, wherein an activation energy to ionize defects of the defect doped material in a strained state is less than the activation energy to ionize the defects when the defect doped material is in an unstrained state.
Dependencies are inferred from the claim text.