MOS Transistor with Folded Channel and Folded Drift Region

A method of forming a semiconductor device, comprising:

• forming a fin of semiconductor material on a substrate, the fin including a first lateral portion, a second lateral portion and an upper portion extending between the first lateral portion and the second lateral portion;
• forming a body of a drain extended metal oxide semiconductor (DEMOS) transistor in the fin, the body having a first conductivity type, the body extending continuously along the first lateral portion, the upper portion, and the second lateral portion;
• forming a drift region of the DEMOS transistor in the fin, the drift region having a second conductivity type opposite from the first conductivity type, the drift region extending continuously along the first lateral portion, the upper portion, and the second lateral portion, and contacting the body continuously along the first lateral portion, the upper portion, and the second lateral portion;
• forming a gate structure of the DEMOS transistor on the body, the gate structure extending continuously along the first lateral portion, the upper portion, and the second lateral portion.

A semiconductor device, comprising:

• a substrate including fin of a semiconductor material;
• and
• a drain extended metal oxide semiconductor (DEMOS) transistor, including:
• a source in the semiconductor material of the fin;
• a drain in the semiconductor material of the fin;
• a body in the semiconductor material of the fin, the body having a first conductivity type;
• a gate structure extending over the body;
• and
• a doped region in the semiconductor material of the fin, the doped region having a second conductivity type, wherein the fin extends continuously and laterally from the source through the body and the doped region to the drain.