Method of manufacturing channel all-around semiconductor device
AssigneePowerchip Semiconductor Manufacturing Corporation
InventorChun-Sheng Chen
Life of this patent
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Abstract
A method of manufacturing a channel all-around semiconductor device includes: forming a plurality of gate structures having the same extension direction, and forming a multi-connected channel layer on a substrate. Each of the gate structures has opposite first end and second end, and the gate structures are all surrounded by the formed multi-connected channel layer, and a plane direction of the multi-connected channel layer is perpendicular to the extension direction of the gate structures, so that channels of the gate structures are connected to each other.
Claims11
A method of manufacturing a channel all-around semiconductor device, comprising:
- forming a plurality of gate structures, wherein the gate structures have the same extension direction, and each of the gate structures comprises a first end and a second end opposite to each other;
- and
- forming a multi-connected channel layer on a substrate, wherein the plurality of gate structures are all surrounded by the multi-connected channel layer, and a plane direction of the multi-connected channel layer is perpendicular to the extension direction of the gate structures, so that channels of the gate structures are electrically connected to each other.
Dependencies are inferred from the claim text.