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US 2022/0037465 A1Published application
Ion Implantation for Nano-FET
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Yee-Chia Yeo
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Abstract
A nanoFET transistor includes doped channel junctions at either end of a channel region for one or more nanosheets of the nanoFET transistor. The channel junctions are formed by a iterative recessing and implanting process which is performed as recesses are made for the source/drain regions. The implanted doped channel junctions can be controlled to achieve a desired lateral straggling of the doped channel junctions.
Claims20
A device comprising:
- a first nanostructure, the first nanostructure comprising a first doped channel junction at either end;
- a second nanostructure over the first nanostructure, the second nanostructure comprising a second doped channel junction at either end;
- a gate structure disposed over the first nanostructure and the second nanostructure, the gate structure extending between the first nanostructure and the second nanostructure;
- and
- a source/drain region adjacent the gate structure, the source/drain region contacting the first nanostructure and the second nanostructure.
2 more elements
A transistor comprising:
- a first nanostructure;
- a second nanostructure over the first nanostructure, wherein at least one of the first nanostructure or second nanostructure comprises first doped channel junctions at each end and a first undoped channel length between the first doped channel junctions;
- a gate structure disposed over the first nanostructure and the second nanostructure, the gate structure extending between the first nanostructure and the second nanostructure;
- and
- a source/drain region adjacent the gate structure, the source/drain region contacting the first nanostructure and the second nanostructure.
2 more elements
A method comprising:
- forming multiple nanostructures over a substrate;
- forming a gate structure over the multiple nanostructures;
- performing a first angled ion implantation to implant first dopants into a first channel end of a first nanostructure of the multiple nanostructures, the first channel end under the gate structure;
- etching the first nanostructure of the alternating nanostructures to form a first recess in the first nanostructure adjacent the gate structure, the etching exposing the first channel end of the first nanostructure;
- performing a second angled ion implantation to implant second dopants into a second channel end of a second nanostructure, the second channel end under the gate structure;
- etching the second nanostructure of the alternating nanostructures to extend the first recess and form a second recess in the second nanostructure adjacent the gate structure, the etching exposing the second channel end of the second nanostructure;
- etching to extend the second recess to form a third recess over the substrate;
- and
- depositing a source/drain region in the third recess.
6 more elements
Dependencies are inferred from the claim text.