Die-to-die isolation structures for packaged transistor devices
AssigneeCree, Inc.
InventorsLei Zhao, Fabian Radulescu
Life of this patent
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Abstract
A transistor amplifier package includes a base, one or more transistor dies on the base, first and second leads coupled to the one or more transistor dies and defining respective radio frequency (RF) signal paths, and an isolation structure on the base between the respective RF signal paths. The isolation structure includes first and second wire bonds. The first and second wire bonds may have a crossed configuration defining at least one cross point therebetween. Related wire bond-based isolation structures are also discussed.
Claims29
A transistor amplifier package, comprising:
- a base;
- one or more transistor dies on the base;
- first and second leads coupled to the one or more transistor dies, wherein the first and second leads define respective radio frequency (RF) signal paths;
- and
- an isolation structure between the respective RF signal paths, the isolation structure comprising first and second wire bonds in a crossed configuration defining at least one cross point therebetween.
A transistor amplifier package, comprising:
- a base;
- one or more transistor dies on the base;
- first and second leads coupled to the one or more transistor dies, wherein the first and second leads define respective radio frequency (RF) signal paths;
- and
- an isolation structure between the respective RF signal paths, the isolation structure comprising first and second wire bonds that are separated from one another by less than about 5 mils.
-31. (canceled)
A transistor amplifier package, comprising:
- a base;
- one or more transistor dies on the base;
- first and second leads coupled to the one or more transistor dies, wherein the first and second leads define respective radio frequency (RF) signal paths;
- and
- an isolation structure between the respective RF signal paths, the isolation structure comprising first and second wire bonds in a non-linear configuration coupled to the base and/or to the one or more transistor dies, wherein the base is free of a ground connection lead.
-41. (canceled)
A transistor amplifier package, comprising:
- a base;
- a transistor die on the base;
- input and output leads coupled to the transistor die, wherein the input and output leads define input and output radio frequency (RF) signal paths, respectively, of a RF amplifier path;
- and
- an isolation structure between the input and output RF signal paths, the isolation structure comprising first and second wire bonds coupled to the base and/or to respective bond pads of the transistor die.
-46. (canceled)
Dependencies are inferred from the claim text.