Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, the method comprising:

• sequentially stacking a mold layer and a support layer on a substrate;
• forming lower electrodes that penetrate the support layer and the mold layer, such that the lower electrodes include a conductive material and have pillar shapes;
• etching the support layer to form a support pattern that is partially in contact with sidewalls of the lower electrodes, the support pattern including a support hole exposing the mold layer;
• removing the mold layer through the support hole to expose surfaces of the lower electrodes;
• injecting impurities into the lower electrodes to form a doped layer covering each of the lower electrodes;
• removing the impurities from a first portion of the doped layer exposed by the support pattern and leaving the impurities in a second portion of the doped layer located between the support pattern and each of the lower electrodes;
• and
• removing the first portion.

A semiconductor device, comprising:

• a device isolation pattern defining active regions in a substrate;
• a word line in the substrate and intersecting the active regions;
• first doped regions in the active regions at one side of the word line, respectively;
• second doped regions in the active regions at another side of the word line, respectively;
• bit lines connected to the first doped regions, respectively, the bit lines intersecting the word line;
• lower electrode contacts connected to the second doped regions, respectively;
• lower electrodes on the lower electrode contacts, respectively;
• a support pattern on sidewalls of the lower electrodes to connect the lower electrodes;
• connection patterns between the support pattern and the lower electrodes;
• and
• a dielectric layer covering the lower electrodes and the support pattern,
• wherein:
• a height of the connection pattern in a vertical direction perpendicular to a top surface of the substrate is substantially equal to a height of the support pattern in the vertical direction, as measured at an interface between the connection pattern and the support pattern, and
• the lower electrodes and the connection pattern, which are connected to each other, constitute one body formed of the same material.