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US 2022/0037457 A1Published application
Ensuring minimum density compliance in integrated circuit inductors
AssigneeSilicon Laboratories Inc.
InventorEDUARDO JOSE DOS SANTOS VIEGAS
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Abstract
In one aspect, an inductor may include at least one loop formed on a first metal layer and a non-uniform introduced pattern formed on the first metal layer and circumscribed by the at least one loop. The non-uniform introduced pattern may be formed of a plurality of structures and may have a maximum density at an interior portion thereof and a minimum density at a peripheral portion thereof, where at least some of the plurality of structures have different sizes.
Claims21
An apparatus comprising:
- an inductor formed on a semiconductor die, the inductor comprising:
- at least one loop formed on a first metal layer;
- and
- a non-uniform introduced pattern formed on the first metal layer and circumscribed by the at least one loop, wherein the non-uniform introduced pattern is formed of a plurality of structures and has a maximum density at an interior portion thereof and a minimum density at a peripheral portion thereof, wherein at least some of the plurality of structures have different sizes.
1 more element
An apparatus comprising:
- an inductor formed on a semiconductor die, the inductor comprising at least one loop formed on a metal layer;
- and
- a non-uniform introduced fractal pattern formed on the metal layer and circumscribed by the at least one loop, wherein the non-uniform introduced fractal pattern comprises:
- a first plurality of structures each having a horizontal portion and a vertical portion, the horizontal portion and the vertical portion having at least substantially a minimum width according to design rule checking (DRC) requirements;
- and
- a second plurality of structures each adapted at least substantially at a minimum distance according to the DRC requirements from at least one of the first plurality of structures, each of the second plurality of structures smaller than the first plurality of structures and having a horizontal portion and a vertical portion, the horizontal portion and the vertical portion having at least substantially the minimum width.
3 more elements
A method comprising:
- forming a top metal layer above a semiconductor wafer;
- patterning the top metal layer to include at least one loop of an inductor and a non-uniform introduced pattern circumscribed by the at least one loop, the non-uniform introduced pattern formed of a plurality of recursive structures and having a maximum density at an interior portion thereof and a minimum density at a peripheral portion thereof, wherein at least some of the plurality of structures have different sizes;
- and
- depositing a field oxide over the patterned top metal layer.
1 more element
Dependencies are inferred from the claim text.