US 2022/0037398 A1Published application

Three-dimensional resistive random access memory and method making it possible to obtain such a memory

AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives

InventorKhalil EL HAJJAM

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Abstract

A memory includes a memory cell including a planar electrode in a first plane; a floating electrode in a second plane, parallel to the first plane; a vertical electrode. The planar electrode includes a first part facing a first part of the floating electrode, the first part of the planar electrode and the first part of the second electrode being separated by a first layer of a first active material, the vertical electrode includes a part facing a second part of the floating electrode, the first part of the vertical electrode and the second part of the floating electrode being separated by a second layer of a second active material. The first active material forms a selector or a memory point and the second active material forms a memory point or a selector. The planar and floating electrodes not sharing any plane parallel to the first or second plane.

Claims9

Dependent claims

A memory comprising at least one memory cell, each memory cell comprising:

a first electrode, forming a planar electrode, extending essentially along a first plane;
a second electrode, forming a floating electrode, extending essentially along a second plane, parallel to the first plane;
a third electrode, forming a vertical electrode, extending essentially along a direction perpendicular to the first plane;
the planar electrode comprising at least one first part facing a first part of the floating electrode, the first part of the planar electrode and the first part of the floating electrode being separated by a first layer of a first active material, the vertical electrode comprising at least one first part facing a second part of the floating electrode, the first part of the vertical electrode and the second part of the floating electrode being separated by a second layer of a second active material, the first active material being adapted to form a selector or a memory point and the second active material being adapted to form a memory point or a selector, the first electrode and the second electrode not sharing any plane that is parallel to the first plane or to the second plane.

1 more element

A method for manufacturing a memory comprising at least one memory cell, said method comprising:

a first step of deposition of a first layer of a first insulator material;
a second step of deposition of a first layer of a conductor material;
a third step of deposition of a second layer of a second insulator material;
said first step of deposition of a first layer of a first insulator material, second step of deposition of a first layer of a conductor material and third step of deposition of a second layer of a second insulator material being able to be iterated a plurality of times;
the method also comprising:
a first step of anisotropic etching, so as to create an opening in the first layer of a first insulator material, the first layer of a conductor material and the second layer of a second insulator material;
a first step of selective etching of the first layer of a conductor material so as to form an indent in said first layer of a conductor material;
a step of deposition or growth of a third layer of a third insulator material so as to fill the indent obtained during the first step of selective etching of the first layer of a conductor material;
a second step of selective etching of the first layer of a first insulator material;
a first step of conformal deposition of a first layer of a first active material;
a fifth step of deposition of a second layer of a conductor material;
a third step of anisotropic etching of the first layer of a first active material and the second layer of a conductor material;
a second step of conformal deposition of a second layer of a second active material;
a sixth step of deposition of a third layer of a conductor material;
the first active material being adapted to form a selector or a memory point and the second active material being adapted to form a memory point or a selector.

12 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/312,702Filed 12 Dec 2019
Priority: FR 187284213 Dec 2018
Published: 3 Feb 2022
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10B 63/845
Arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays: the switching components being connected to a common vertical conductor
H10N 70/066
Shaping switching materials: by filling of openings, e.g. damascene method
H10N 70/8828
Compounds of sulfur, selenium or tellurium, e.g. chalcogenides: tellurides, e.g. GeSbTe
H10N 70/8833
Oxides or nitrides: binary metal oxides, e.g. TaOx

Family

US 11,985,833 B2Related patent
US 2022/0037398 A1This patent

From the US filing history. Foreign family members aren’t listed.

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