Optoelectronic device comprising pixels which emit three colours
AssigneeAledia
InventorIvan-Christophe ROBIN
Life of this patent
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AssigneeAledia
InventorIvan-Christophe ROBIN
Estimating the term…
An optoelectronic device includes at least one primary sub-pixel having at least one first primary stack with at least two first main layers of indium nitride and gallium nitride, the layers separated in pairs at least by a first intermediate layer of gallium nitride. The device includes a first primary active layer with at least one first quantum well, and a second primary stack having at least two second main layers of indium nitride and gallium nitride the layers separated in pairs by a second intermediate layer of gallium nitride; at least one second primary active layer with one second quantum well; and a first primary junction layer formed on and in contact with the second primary active layer, the first primary junction layer doped according to a second type of doping chosen from an N-type and a P-type dopings, the second type of doping different from the first type.
An optoelectronic device comprising at least one pixel, said at least one pixel including at least one primary sub-pixel comprising at least one primary light-emitting diode adapted to emit a first light radiation substantially having a first wavelength and formed on a support surface of a substrate, the primary sub-pixel comprising:
A method for manufacturing an optoelectronic device, including a phase of forming at least one primary sub-pixel, the method including the following steps:
Dependencies are inferred from the claim text.