Three-Dimensional Memory Device and Method

A device comprising:

• a source line extending in a first direction;
• a bit line extending in the first direction;
• a back gate between the source line and the bit line, the back gate extending in the first direction;
• a channel layer surrounding the back gate;
• a word line extending in a second direction, the second direction perpendicular to the first direction;
• and
• a data storage layer extending along the word line, the data storage layer between the word line and the channel layer, the data storage layer between the word line and the bit line, the data storage layer between the word line and the source line.

A device comprising:

• a back gate extending in a first direction;
• an isolation region surrounding the back gate;
• a channel layer surrounding the isolation region;
• a data storage layer contacting the channel layer;
• and
• a word line extending in a second direction, the second direction perpendicular to the first direction, the word line comprising a first main layer, a second main layer, and a seed layer, the seed layer laterally disposed between the first main layer and the second main layer, the first main layer contacting the data storage layer.