Three-dimensional memory device with hydrogen-rich semiconductor channels
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsKun Zhang, Wenxi Zhou, Zhiliang Xia, Zongliang Huo
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Abstract
Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a memory stack including interleaved stack conductive layers and stack dielectric layers, a semiconductor layer, a plurality of channel structures each extending vertically through the memory stack into the semiconductor layer, and an insulating structure extending vertically through the memory stack and including a dielectric layer doped with at least one of hydrogen or an isotope of hydrogen.
Claims20
A three-dimensional (3D) memory device, comprising:
- a memory stack comprising interleaved stack conductive layers and stack dielectric layers;
- a semiconductor layer;
- a plurality of channel structures each extending vertically through the memory stack into the semiconductor layer;
- and
- an insulating structure extending vertically through the memory stack and comprising a dielectric layer doped with at least one of hydrogen or an isotope of hydrogen.
A three-dimensional (3D) memory device, comprising:
- a memory stack comprising interleaved stack conductive layers and stack dielectric layers;
- a semiconductor layer;
- a plurality of channel structures each extending vertically through the memory stack into the semiconductor layer, wherein each of the channel structures comprises a memory film and a semiconductor channel doped with at least one of hydrogen or an isotope of hydrogen;
- and
- an insulating structure extending vertically through the memory stack and comprising a dielectric layer.
A method for forming a three-dimensional (3D) memory device, comprising:
- forming a channel structure extending vertically through a memory stack into a semiconductor layer on a substrate, wherein the memory stack comprises interleaved stack conductive layers and stack dielectric layers;
- and
- forming an insulating structure in an opening extending vertically through the memory stack and comprising a dielectric layer doped with at least one of hydrogen or an isotope of hydrogen.
Dependencies are inferred from the claim text.