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US 2022/0037329 A1Published application
Semiconductor structure and forming method of semiconductor structure
OwnerYachao XUinventor
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Abstract
A semiconductor structure and a forming method of a semiconductor structure are provided. The semiconductor structure includes: a substrate; an active region, located in the substrate; and gate trenches, intersected with the active region and dividing the active region into at least one source region and two drain regions, the source region including a first doped region and a first extended doped region below the first doped region.
Claims20
A semiconductor structure, comprising:
- a substrate;
- an active region, located in the substrate;
- and
- gate trenches, intersected with the active region and dividing the active region into at least one source region and two drain regions, the source region comprising a first doped region and a first extended doped region below the first doped region.
1 more element
A forming method of a semiconductor structure, comprising:
- providing a substrate;
- forming isolation structures in the substrate to define an active region;
- forming at least two gate trenches crossing the active region;
- and
- forming a first doped region and a first extended doped region below the first doped region in the active region between the gate trenches.
2 more elements
Dependencies are inferred from the claim text.